| Short channel monolayer MoS2 field-effect transistors defined by SiOx nanofins down to 20nm | |
| Bi, KX; Liu, HZ; Chen, YQ; Luo, F; Shu, ZW; Lin, J; Liu, S; Liu, HW; Zeng, ZY; Dai, P | |
| 刊名 | NANOTECHNOLOGY
 |
| 2019 | |
| 卷号 | Vol.30 No.29 |
| 关键词 | short channel devices hydrogen silsesquioxane (HSQ) electron resists large area preparation |
| ISSN号 | 0957-4484;1361-6528 |
| URL标识 | 查看原文 |
| 公开日期 | [db:dc_date_available] |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/4748573 |
| 专题 | 湖南大学 |
| 作者单位 | 1.Hunan Univ, State Key Lab Adv Design & Mfg Vehicle Body, Sch Phys & Elect, Changsha 410082, Hunan, Peoples R China 2.Hunan Univ, Coll Mech & Vehicle Engn, Changsha 410082, Hunan, Peoples R China 3.Natl Univ Def Technol, Coll Adv Interdisciplinary Studies, Changsha 410073, Hunan, Peoples R China 4.Hunan Univ, Coll Chem & Chem Engn, State Key Lab Chemo Biosensing & Chemometr, ICBN, Changsha 410082, Hunan, Peoples R China |
| 推荐引用方式 GB/T 7714 | Bi, KX,Liu, HZ,Chen, YQ,et al. Short channel monolayer MoS2 field-effect transistors defined by SiOx nanofins down to 20nm[J]. NANOTECHNOLOGY,2019,Vol.30 No.29. |
| APA | Bi, KX.,Liu, HZ.,Chen, YQ.,Luo, F.,Shu, ZW.,...&Dai, P.(2019).Short channel monolayer MoS2 field-effect transistors defined by SiOx nanofins down to 20nm.NANOTECHNOLOGY,Vol.30 No.29. |
| MLA | Bi, KX,et al."Short channel monolayer MoS2 field-effect transistors defined by SiOx nanofins down to 20nm".NANOTECHNOLOGY Vol.30 No.29(2019). |
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