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	Incubation effect during laser-induced backside wet etching of sapphire using high-repetition-rate near-infrared nanosecond lasers.
	Long, Jiangyou; Zhou, Caixia; Cao, Zhouquan; Xie, Xiaozhu; Hu, Wei
刊名	Optics & Laser Technology
	2019
卷号	Vol.109页码:61-70
关键词	CRYSTAL etching *SAPPHIRES *LASER pulses *LASER ablation *COPPER ions
ISSN号	0030-3992
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4743074
专题	湖南大学
作者单位	Laser Micro/Nano Processing Research Centre, School of Electromechanical Engineering, Guangdong University of Technology, Guangzhou 510006, PR China
推荐引用方式 GB/T 7714	Long, Jiangyou,Zhou, Caixia,Cao, Zhouquan,et al. Incubation effect during laser-induced backside wet etching of sapphire using high-repetition-rate near-infrared nanosecond lasers.[J]. Optics & Laser Technology,2019,Vol.109:61-70.
APA	Long, Jiangyou,Zhou, Caixia,Cao, Zhouquan,Xie, Xiaozhu,&Hu, Wei.(2019).Incubation effect during laser-induced backside wet etching of sapphire using high-repetition-rate near-infrared nanosecond lasers..Optics & Laser Technology,Vol.109,61-70.
MLA	Long, Jiangyou,et al."Incubation effect during laser-induced backside wet etching of sapphire using high-repetition-rate near-infrared nanosecond lasers.".Optics & Laser Technology Vol.109(2019):61-70.

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