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Analysis of Raman scattering from inclined GeSn/Ge dual-nanowire heterostructure on Ge substrate
Han, Delong; Ye, Han; Song, Yuxin; Zhu, Zhongyunshen; Yang, Yuekun; Yu, Zhongyuan; Liu, Yumin; Wang, Shumin; Di, Zengfeng
刊名APPLIED SURFACE SCIENCE
2019
卷号Vol.463页码:581-586
关键词Dual-nanowire heterostructure GeSn alloy Raman scattering Strain relaxation
ISSN号0169-4332
URL标识查看原文
公开日期[db:dc_date_available]
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/4741618
专题湖南大学
作者单位1.Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China
2.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
3.Chinese Acad Sci, Key Lab Terahertz Solid State Technol, Shanghai 200050, Peoples R China
4.Chalmers Univ Technol, Dept Microtechnol & Nanosci, S-41296 Gothenburg, Sweden
推荐引用方式
GB/T 7714
Han, Delong,Ye, Han,Song, Yuxin,et al. Analysis of Raman scattering from inclined GeSn/Ge dual-nanowire heterostructure on Ge substrate[J]. APPLIED SURFACE SCIENCE,2019,Vol.463:581-586.
APA Han, Delong.,Ye, Han.,Song, Yuxin.,Zhu, Zhongyunshen.,Yang, Yuekun.,...&Di, Zengfeng.(2019).Analysis of Raman scattering from inclined GeSn/Ge dual-nanowire heterostructure on Ge substrate.APPLIED SURFACE SCIENCE,Vol.463,581-586.
MLA Han, Delong,et al."Analysis of Raman scattering from inclined GeSn/Ge dual-nanowire heterostructure on Ge substrate".APPLIED SURFACE SCIENCE Vol.463(2019):581-586.
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