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	Threshold Voltage Characteristics for Silicon Nanowire Field-Effect Transistor With a Double-Layer Gate Structure
	Yang, HG
刊名	IEEE TRANSACTIONS ON ELECTRON DEVICES
	2019
卷号	Vol.66 No.1页码:771-776
关键词	Double-layer gate structure MOS devices short-channel effect silicon nanowire (Si-NW) threshold voltage characteristics
ISSN号	0018-9383
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4739000
专题	湖南大学
作者单位	Hunan Univ, Sch Phys & Elect, Changsha 410006, Hunan, Peoples R China
推荐引用方式 GB/T 7714	Yang, HG. Threshold Voltage Characteristics for Silicon Nanowire Field-Effect Transistor With a Double-Layer Gate Structure[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2019,Vol.66 No.1:771-776.
APA	Yang, HG.(2019).Threshold Voltage Characteristics for Silicon Nanowire Field-Effect Transistor With a Double-Layer Gate Structure.IEEE TRANSACTIONS ON ELECTRON DEVICES,Vol.66 No.1,771-776.
MLA	Yang, HG."Threshold Voltage Characteristics for Silicon Nanowire Field-Effect Transistor With a Double-Layer Gate Structure".IEEE TRANSACTIONS ON ELECTRON DEVICES Vol.66 No.1(2019):771-776.

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