| Heteroepitaxial 3C-SiC on Si with flow-modulated carbonization process conditions | |
| Li, Yun; Zhao, Zhifei; Yu, Le; Wang, Yi; Yin, Zhijun; Li, Zhonghui; Han, Ping | |
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 2019 | |
| 卷号 | Vol.506页码:114-116 |
| 关键词 | Chemical vapor deposition processes Semiconducting materials Heteroepitaxial 3C-SiC films Flow-modulated carbonization process |
| ISSN号 | 0022-0248 |
| URL标识 | 查看原文 |
| 公开日期 | [db:dc_date_available] |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/4736956 |
| 专题 | 湖南大学 |
| 作者单位 | 1.Nanjing Univ, Coll Elect Sci & Engn, Nanjing 210093, Jiangsu, Peoples R China 2.Nanjing Elect Devices Inst, Sci & Technol Monolith Integrated Circuits & Modu, Nanjing 210016, Jiangsu, Peoples R China |
| 推荐引用方式 GB/T 7714 | Li, Yun,Zhao, Zhifei,Yu, Le,et al. Heteroepitaxial 3C-SiC on Si with flow-modulated carbonization process conditions[J]. JOURNAL OF CRYSTAL GROWTH,2019,Vol.506:114-116. |
| APA | Li, Yun.,Zhao, Zhifei.,Yu, Le.,Wang, Yi.,Yin, Zhijun.,...&Han, Ping.(2019).Heteroepitaxial 3C-SiC on Si with flow-modulated carbonization process conditions.JOURNAL OF CRYSTAL GROWTH,Vol.506,114-116. |
| MLA | Li, Yun,et al."Heteroepitaxial 3C-SiC on Si with flow-modulated carbonization process conditions".JOURNAL OF CRYSTAL GROWTH Vol.506(2019):114-116. |
| 个性服务 |
| 查看访问统计 |
| 相关权益政策 |
| 暂无数据 |
| 收藏/分享 |
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。
修改评论