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	Simulation of V/G during Φ450 mm Czochralski Grown Silicon Single Crystal Growth under the Different Crystal and Crucible Rotation Rates
	Guan X.J.; Zhang X.Y.
刊名	MATEC Web of Conferences
	2016
卷号	67
DOI	10.1051/matecconf/20166702002
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4694467
专题	山东大学
作者单位	School of Materials Science and Engineering, Shandong University, Jinan, 250061, China, Institute of Crystal Materials, Shandong Universit
推荐引用方式 GB/T 7714	Guan X.J.,Zhang X.Y.. Simulation of V/G during Φ450 mm Czochralski Grown Silicon Single Crystal Growth under the Different Crystal and Crucible Rotation Rates[J]. MATEC Web of Conferences,2016,67.
APA	Guan X.J.,&Zhang X.Y..(2016).Simulation of V/G during Φ450 mm Czochralski Grown Silicon Single Crystal Growth under the Different Crystal and Crucible Rotation Rates.MATEC Web of Conferences,67.
MLA	Guan X.J.,et al."Simulation of V/G during Φ450 mm Czochralski Grown Silicon Single Crystal Growth under the Different Crystal and Crucible Rotation Rates".MATEC Web of Conferences 67(2016).

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