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	Efficient enhancement of bismuth near infrared luminescence by the co-doping of tantalum in GYAP crystal
	Zhang, Peixiong[1,2,3]; Chen, Nan[1,2,3]; Zhu, Siqi[1,2,3]; Li, Zhen[1,2,3]; Chen, Zhenqiang[1,2,3]; Zheng, Yi[4]; Yu, Jin[5]
	2018
卷号	26期号:18页码:23207
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4620746
专题	暨南大学
作者单位	1.[1] Guangdong Provincial Key Laboratory, Optical Fiber Sensing and Communications, Guangzhou, Guangdong, 510630, China 2.[2] Guangdong Provincial Engineering Research Center of Crystal and Laser Technology, Guangzhou, Guangdong, 510632, China 3.[3] Department of Optoelectronic Engineering, Jinan University, Guangzhou, Guangdong, 510632, China 4.[4] Guangdong Provincial Engineering Research Center of Crystal and Laser Technology, Guangzhou, Guangdong, 510632, China 5.[5] Academy of Opto-Electronics, Chinese Academy of Science, Beijing, 100094, China
推荐引用方式 GB/T 7714	Zhang, Peixiong[1,2,3],Chen, Nan[1,2,3],Zhu, Siqi[1,2,3],et al. Efficient enhancement of bismuth near infrared luminescence by the co-doping of tantalum in GYAP crystal[J],2018,26(18):23207.
APA	Zhang, Peixiong[1,2,3].,Chen, Nan[1,2,3].,Zhu, Siqi[1,2,3].,Li, Zhen[1,2,3].,Chen, Zhenqiang[1,2,3].,...&Yu, Jin[5].(2018).Efficient enhancement of bismuth near infrared luminescence by the co-doping of tantalum in GYAP crystal.,26(18),23207.
MLA	Zhang, Peixiong[1,2,3],et al."Efficient enhancement of bismuth near infrared luminescence by the co-doping of tantalum in GYAP crystal".26.18(2018):23207.

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