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	An Improved SPICE Model of SiC BJT Incorporating Surface Recombination Effect
	Jun Wang; Shiwei Liang; Linfeng Deng; Xin Yin; Z. John Shen
刊名	IEEE Transactions on Power Electronics
	2019
卷号	Vol.34 No.7页码:6794-6802
关键词	Silicon carbide Predictive models Spontaneous emission Junctions SPICE Temperature Numerical models Bipolar junction transistor (BJT) proportional base driver SPICE model surface recombination effect 4H-SiC
ISSN号	0885-8993;1941-0107
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4609965
专题	湖南大学
作者单位	College of Electrical and Information Engineering, Hunan University, Changsha, China
推荐引用方式 GB/T 7714	Jun Wang,Shiwei Liang,Linfeng Deng,et al. An Improved SPICE Model of SiC BJT Incorporating Surface Recombination Effect[J]. IEEE Transactions on Power Electronics,2019,Vol.34 No.7:6794-6802.
APA	Jun Wang,Shiwei Liang,Linfeng Deng,Xin Yin,&Z. John Shen.(2019).An Improved SPICE Model of SiC BJT Incorporating Surface Recombination Effect.IEEE Transactions on Power Electronics,Vol.34 No.7,6794-6802.
MLA	Jun Wang,et al."An Improved SPICE Model of SiC BJT Incorporating Surface Recombination Effect".IEEE Transactions on Power Electronics Vol.34 No.7(2019):6794-6802.

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