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Fabrication and properties of self-standing GaN-based film with a strong phase-separated InGaN/GaN layer in neutral electrolyte
Gao, Qingxue; Xiao, Hongdi; Cao, Dezhong; Yang, Xiaokun; Liu, Jiandiang; Mao, Hongzhi; Ma, Jin
刊名JOURNAL OF ALLOYS AND COMPOUNDS
2017
卷号722页码:767-771
关键词Self-standing GaN-based thin films Electrochemical etching InGaN/GaN MQWs Neutral electrolyte
DOI10.1016/j.jallcom.2017.06.158
URL标识查看原文
公开日期[db:dc_date_available]
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/4594468
专题山东大学
作者单位1.Shandong Univ, Sch Microelect, Jinan 250100, Peoples R China.
2.S
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GB/T 7714
Gao, Qingxue,Xiao, Hongdi,Cao, Dezhong,et al. Fabrication and properties of self-standing GaN-based film with a strong phase-separated InGaN/GaN layer in neutral electrolyte[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2017,722:767-771.
APA Gao, Qingxue.,Xiao, Hongdi.,Cao, Dezhong.,Yang, Xiaokun.,Liu, Jiandiang.,...&Ma, Jin.(2017).Fabrication and properties of self-standing GaN-based film with a strong phase-separated InGaN/GaN layer in neutral electrolyte.JOURNAL OF ALLOYS AND COMPOUNDS,722,767-771.
MLA Gao, Qingxue,et al."Fabrication and properties of self-standing GaN-based film with a strong phase-separated InGaN/GaN layer in neutral electrolyte".JOURNAL OF ALLOYS AND COMPOUNDS 722(2017):767-771.
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