Fabrication and properties of self-standing GaN-based film with a strong phase-separated InGaN/GaN layer in neutral electrolyte | |
Gao, Qingxue; Xiao, Hongdi; Cao, Dezhong; Yang, Xiaokun; Liu, Jiandiang; Mao, Hongzhi; Ma, Jin | |
刊名 | JOURNAL OF ALLOYS AND COMPOUNDS |
2017 | |
卷号 | 722页码:767-771 |
关键词 | Self-standing GaN-based thin films Electrochemical etching InGaN/GaN MQWs Neutral electrolyte |
DOI | 10.1016/j.jallcom.2017.06.158 |
URL标识 | 查看原文 |
公开日期 | [db:dc_date_available] |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/4594468 |
专题 | 山东大学 |
作者单位 | 1.Shandong Univ, Sch Microelect, Jinan 250100, Peoples R China. 2.S |
推荐引用方式 GB/T 7714 | Gao, Qingxue,Xiao, Hongdi,Cao, Dezhong,et al. Fabrication and properties of self-standing GaN-based film with a strong phase-separated InGaN/GaN layer in neutral electrolyte[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2017,722:767-771. |
APA | Gao, Qingxue.,Xiao, Hongdi.,Cao, Dezhong.,Yang, Xiaokun.,Liu, Jiandiang.,...&Ma, Jin.(2017).Fabrication and properties of self-standing GaN-based film with a strong phase-separated InGaN/GaN layer in neutral electrolyte.JOURNAL OF ALLOYS AND COMPOUNDS,722,767-771. |
MLA | Gao, Qingxue,et al."Fabrication and properties of self-standing GaN-based film with a strong phase-separated InGaN/GaN layer in neutral electrolyte".JOURNAL OF ALLOYS AND COMPOUNDS 722(2017):767-771. |
个性服务 |
查看访问统计 |
相关权益政策 |
暂无数据 |
收藏/分享 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论