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	Porosity-induced weakening of piezoresponse in GaN layers by means of piezoelectric force microscopy
	Cui, Jishi; Cao, Dezhong; Gao, Qingxue; Yang, Xiaokun; Liu, Jianqiang; Ma, Jin; Xiao, Hongdi
刊名	MATERIALS LETTERS
	2017
卷号	208页码:31-34
关键词	Porous materials GaN Piezoelectric materials Porosity UV-assisted electrochemical etching
DOI	10.1016/j.matlet.2017.05.045
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4593755
专题	山东大学
作者单位	1.Shandong Univ, Sch Microelect, Jinan 250100, Shandong, Peoples R China. 2.[Cao, Dezh
推荐引用方式 GB/T 7714	Cui, Jishi,Cao, Dezhong,Gao, Qingxue,et al. Porosity-induced weakening of piezoresponse in GaN layers by means of piezoelectric force microscopy[J]. MATERIALS LETTERS,2017,208:31-34.
APA	Cui, Jishi.,Cao, Dezhong.,Gao, Qingxue.,Yang, Xiaokun.,Liu, Jianqiang.,...&Xiao, Hongdi.(2017).Porosity-induced weakening of piezoresponse in GaN layers by means of piezoelectric force microscopy.MATERIALS LETTERS,208,31-34.
MLA	Cui, Jishi,et al."Porosity-induced weakening of piezoresponse in GaN layers by means of piezoelectric force microscopy".MATERIALS LETTERS 208(2017):31-34.

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