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	Growth and Temperature-Depending Raman Characterization of Different Nitrogen-Doped 4H-SiC Crystals
	Xiang Long.Yang; Xiu Fang.Chen; Yan.Peng; Xue Jian.Xi
刊名	Materials Science Forum
	2017
期号	897页码:307-310
关键词	Raman Spectra,Electrical Properties,N-Doped SiC,Phonon Lifetime
DOI	10.4028/www.scientific.net/MSF.897.307
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4587889
专题	山东大学
作者单位	1.Shandong University 2.Shandong University 3.Shandong University 4.Shandong University 5.Shandong University 6.Shandong University 7.State Gr
推荐引用方式 GB/T 7714	Xiang Long.Yang,Xiu Fang.Chen,Yan.Peng,et al. Growth and Temperature-Depending Raman Characterization of Different Nitrogen-Doped 4H-SiC Crystals[J]. Materials Science Forum,2017(897):307-310.
APA	Xiang Long.Yang,Xiu Fang.Chen,Yan.Peng,&Xue Jian.Xi.(2017).Growth and Temperature-Depending Raman Characterization of Different Nitrogen-Doped 4H-SiC Crystals.Materials Science Forum(897),307-310.
MLA	Xiang Long.Yang,et al."Growth and Temperature-Depending Raman Characterization of Different Nitrogen-Doped 4H-SiC Crystals".Materials Science Forum .897(2017):307-310.

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