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	A new direct growth method of graphene on Si-face of 6H-SiC by synergy of the inner and external carbon sources
	Yang, Zhiyuan; Xu, Shicai; Zhao, Lili; Zhang, Jing; Wang, Zhengping; Chen, Xiufang; Cheng, Xiufeng; Yu, Fapeng; Zhao, Xian
刊名	APPLIED SURFACE SCIENCE
	2018
卷号	436页码:511-518
关键词	Graphene 6H-SiC XPS Raman spectroscopy AFM
DOI	10.1016/j.apsusc.2017.11.252
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4582852
专题	山东大学
作者单位	Shandong Univ, State Key Lab Crystal Mat, Jinan 25
推荐引用方式 GB/T 7714	Yang, Zhiyuan,Xu, Shicai,Zhao, Lili,et al. A new direct growth method of graphene on Si-face of 6H-SiC by synergy of the inner and external carbon sources[J]. APPLIED SURFACE SCIENCE,2018,436:511-518.
APA	Yang, Zhiyuan.,Xu, Shicai.,Zhao, Lili.,Zhang, Jing.,Wang, Zhengping.,...&Zhao, Xian.(2018).A new direct growth method of graphene on Si-face of 6H-SiC by synergy of the inner and external carbon sources.APPLIED SURFACE SCIENCE,436,511-518.
MLA	Yang, Zhiyuan,et al."A new direct growth method of graphene on Si-face of 6H-SiC by synergy of the inner and external carbon sources".APPLIED SURFACE SCIENCE 436(2018):511-518.

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