| Electrical contacts and tunable rectifications in monolayer GeSe-metal junctions | |
| Fan, Zhi-Qiang; Chen, Jiezhi; Jiang, Xiangwei | |
| 刊名 | JOURNAL OF PHYSICS D-APPLIED PHYSICS
 |
| 2018 | |
| 卷号 | 51期号:33 |
| 关键词 | 2D semiconductor rectification density-functional theory Schottky contact |
| DOI | 10.1088/1361-6463/aad2a2 |
| URL标识 | 查看原文 |
| 公开日期 | [db:dc_date_available] |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/4578323 |
| 专题 | 山东大学 |
| 作者单位 | 1.Changsha Univ Sci & Technol, Sch Phys & Elect Sci, Changsha 410114, Hunan, Peoples R China. 2.Chin |
| 推荐引用方式 GB/T 7714 | Fan, Zhi-Qiang,Chen, Jiezhi,Jiang, Xiangwei. Electrical contacts and tunable rectifications in monolayer GeSe-metal junctions[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2018,51(33). |
| APA | Fan, Zhi-Qiang,Chen, Jiezhi,&Jiang, Xiangwei.(2018).Electrical contacts and tunable rectifications in monolayer GeSe-metal junctions.JOURNAL OF PHYSICS D-APPLIED PHYSICS,51(33). |
| MLA | Fan, Zhi-Qiang,et al."Electrical contacts and tunable rectifications in monolayer GeSe-metal junctions".JOURNAL OF PHYSICS D-APPLIED PHYSICS 51.33(2018). |
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