| Simulation Study of Enhancement-Mode InAlN/GaN HEMT with InGaN Cap Layer | |
| Wei, Lin-Cheng; Wang, Quan; Feng, Chun; Xiao, Hong-Ling; Jiang, Li-Juan; Wang, Cui-Mei; Li, Wei; Wang, Xiao-Liang; Liu, Feng-Qi; Xu, 更多 | |
| 刊名 | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
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| 2018 | |
| 卷号 | 18期号:11页码:7400-7404 |
| 关键词 | Enhancement-Mode InAlN/GaN HEMT Simulation |
| DOI | 10.1166/jnn.2018.16076 |
| URL标识 | 查看原文 |
| 公开日期 | [db:dc_date_available] |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/4573731 |
| 专题 | 山东大学 |
| 作者单位 | Chin |
| 推荐引用方式 GB/T 7714 | Wei, Lin-Cheng,Wang, Quan,Feng, Chun,et al. Simulation Study of Enhancement-Mode InAlN/GaN HEMT with InGaN Cap Layer[J]. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY,2018,18(11):7400-7404. |
| APA | Wei, Lin-Cheng.,Wang, Quan.,Feng, Chun.,Xiao, Hong-Ling.,Jiang, Li-Juan.,...&Xu, 更多.(2018).Simulation Study of Enhancement-Mode InAlN/GaN HEMT with InGaN Cap Layer.JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY,18(11),7400-7404. |
| MLA | Wei, Lin-Cheng,et al."Simulation Study of Enhancement-Mode InAlN/GaN HEMT with InGaN Cap Layer".JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY 18.11(2018):7400-7404. |
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