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	GaAs Nanowires Grown by Catalyst Epitaxy for High Performance Photovoltaics
	Wang, Ying; Zhou, Xinyuan; Yang, Zaixing; Wang, Fengyun; Han, Ning; Chen, Yunfa; Ho, Johnny C.
刊名	CRYSTALS
	2018
卷号	8期号:9
关键词	GaAs nanowires catalyst epitaxy photovoltaics optical absorption Schottky barrier
DOI	10.3390/cryst8090347
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4572103
专题	山东大学
作者单位	1.Chinese Acad Sci, Inst Proc Engn, State Key Lab Multiphase Complex Syst, Beijing 100190, Peoples R China. 2.[Wan
推荐引用方式 GB/T 7714	Wang, Ying,Zhou, Xinyuan,Yang, Zaixing,et al. GaAs Nanowires Grown by Catalyst Epitaxy for High Performance Photovoltaics[J]. CRYSTALS,2018,8(9).
APA	Wang, Ying.,Zhou, Xinyuan.,Yang, Zaixing.,Wang, Fengyun.,Han, Ning.,...&Ho, Johnny C..(2018).GaAs Nanowires Grown by Catalyst Epitaxy for High Performance Photovoltaics.CRYSTALS,8(9).
MLA	Wang, Ying,et al."GaAs Nanowires Grown by Catalyst Epitaxy for High Performance Photovoltaics".CRYSTALS 8.9(2018).

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