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	High-performance enhancement-mode thin-film transistors based on Mg-doped In2O3 nanofiber networks
	Zhang, Hongchao; Meng, You; Song, Longfei; Luo, Linqu; Qin, Yuanbin; Han, Ning; Yang, Zaixing; Liu, Lei; Ho, Johnny C.; Wang, Fengyu 更多
刊名	NANO RESEARCH
	2018
卷号	11期号:3页码:1227-1237
关键词	In2O3 nanofiber transistor doping threshold voltage enhancement mode
DOI	10.1007/s12274-017-1735-8
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4566531
专题	山东大学
作者单位	1.Qingdao Univ, Coll Phys, Qingdao 266071, Peoples R China. 2.[Zhang,
推荐引用方式 GB/T 7714	Zhang, Hongchao,Meng, You,Song, Longfei,et al. High-performance enhancement-mode thin-film transistors based on Mg-doped In2O3 nanofiber networks[J]. NANO RESEARCH,2018,11(3):1227-1237.
APA	Zhang, Hongchao.,Meng, You.,Song, Longfei.,Luo, Linqu.,Qin, Yuanbin.,...&Wang, Fengyu 更多.(2018).High-performance enhancement-mode thin-film transistors based on Mg-doped In2O3 nanofiber networks.NANO RESEARCH,11(3),1227-1237.
MLA	Zhang, Hongchao,et al."High-performance enhancement-mode thin-film transistors based on Mg-doped In2O3 nanofiber networks".NANO RESEARCH 11.3(2018):1227-1237.

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