Transitions between Be acceptor levels in GaAs bulk | |
Zheng Wei-Min; Huang Hai-Bei; Li Su-Mei; Cong Wei-Yan; Wang Ai-Fang; Li Bin; Song Ying-Xin | |
刊名 | ACTA PHYSICA SINICA |
2019 | |
卷号 | 68期号:18 |
关键词 | far-infrared absorption spectrum Raman spectrum photoluminescence spectrum energy state structure of Be acceptor |
DOI | 10.7498/aps.68.20190254 |
URL标识 | 查看原文 |
公开日期 | [db:dc_date_available] |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/4558369 |
专题 | 山东大学 |
作者单位 | 1.Shandong Univ Weihai, Sch Space Sci & Phys, Weihai 264209, Peoples R China. 2.Shandong Un |
推荐引用方式 GB/T 7714 | Zheng Wei-Min,Huang Hai-Bei,Li Su-Mei,et al. Transitions between Be acceptor levels in GaAs bulk[J]. ACTA PHYSICA SINICA,2019,68(18). |
APA | Zheng Wei-Min.,Huang Hai-Bei.,Li Su-Mei.,Cong Wei-Yan.,Wang Ai-Fang.,...&Song Ying-Xin.(2019).Transitions between Be acceptor levels in GaAs bulk.ACTA PHYSICA SINICA,68(18). |
MLA | Zheng Wei-Min,et al."Transitions between Be acceptor levels in GaAs bulk".ACTA PHYSICA SINICA 68.18(2019). |
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