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Transitions between Be acceptor levels in GaAs bulk
Zheng Wei-Min; Huang Hai-Bei; Li Su-Mei; Cong Wei-Yan; Wang Ai-Fang; Li Bin; Song Ying-Xin
刊名ACTA PHYSICA SINICA
2019
卷号68期号:18
关键词far-infrared absorption spectrum Raman spectrum photoluminescence spectrum energy state structure of Be acceptor
DOI10.7498/aps.68.20190254
URL标识查看原文
公开日期[db:dc_date_available]
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/4558369
专题山东大学
作者单位1.Shandong Univ Weihai, Sch Space Sci & Phys, Weihai 264209, Peoples R China.
2.Shandong Un
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GB/T 7714
Zheng Wei-Min,Huang Hai-Bei,Li Su-Mei,et al. Transitions between Be acceptor levels in GaAs bulk[J]. ACTA PHYSICA SINICA,2019,68(18).
APA Zheng Wei-Min.,Huang Hai-Bei.,Li Su-Mei.,Cong Wei-Yan.,Wang Ai-Fang.,...&Song Ying-Xin.(2019).Transitions between Be acceptor levels in GaAs bulk.ACTA PHYSICA SINICA,68(18).
MLA Zheng Wei-Min,et al."Transitions between Be acceptor levels in GaAs bulk".ACTA PHYSICA SINICA 68.18(2019).
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