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	Bismuth functionalized GaAs as saturable absorber for passive Q-switching at 1.34 μm
	Pan, Han; Chu, Hongwei; Li, Ying; Li, Guiqiu; Zhao, Shengzhi; Li, Dechun
刊名	Optical Materials
	2019
卷号	98
DOI	10.1016/j.optmat.2019.109457
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4558112
专题	山东大学
作者单位	School of Information Science and Engineering, Shandong Provincial Key Laboratory of
推荐引用方式 GB/T 7714	Pan, Han,Chu, Hongwei,Li, Ying,et al. Bismuth functionalized GaAs as saturable absorber for passive Q-switching at 1.34 μm[J]. Optical Materials,2019,98.
APA	Pan, Han,Chu, Hongwei,Li, Ying,Li, Guiqiu,Zhao, Shengzhi,&Li, Dechun.(2019).Bismuth functionalized GaAs as saturable absorber for passive Q-switching at 1.34 μm.Optical Materials,98.
MLA	Pan, Han,et al."Bismuth functionalized GaAs as saturable absorber for passive Q-switching at 1.34 μm".Optical Materials 98(2019).

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