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	Extremely high-gain source-gated transistors
	Zhang, Jiawei; Wilson, Joshua; Auton, Gregory; Wang, Yiming; Xu, Mingsheng; Xin, Qian; Song, Aimin
刊名	PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA
	2019
卷号	116期号:11页码:4843-4848
关键词	source-gated transistor oxide semiconductors Schottky barrier inhomogeneities intrinsic gain
DOI	10.1073/pnas.1820756116
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4549774
专题	山东大学
作者单位	1.Univ Manchester, Sch Elect & Elect Engn, Manchester M13 9PL, Lancs, England. 2.Univ Man
推荐引用方式 GB/T 7714	Zhang, Jiawei,Wilson, Joshua,Auton, Gregory,et al. Extremely high-gain source-gated transistors[J]. PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA,2019,116(11):4843-4848.
APA	Zhang, Jiawei.,Wilson, Joshua.,Auton, Gregory.,Wang, Yiming.,Xu, Mingsheng.,...&Song, Aimin.(2019).Extremely high-gain source-gated transistors.PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA,116(11),4843-4848.
MLA	Zhang, Jiawei,et al."Extremely high-gain source-gated transistors".PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA 116.11(2019):4843-4848.

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