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	Saturated antisolvent pressure induced perylene diimide nanowires with high degree of electron delocalization
	Xu, Wei-Long; Zheng, Min; Ding, C.; Qin, Tian; Niu, Meng-Si; Yang, Xiao-Yu; Yang, Junliang; Hao, Xiao-Tao
刊名	Organic Electronics
	2019
卷号	75
关键词	Nanowires Perylene diimide Saturated antisolvent pressure induced Trap state density π-Electron delocalization
DOI	10.1016/j.orgel.2019.105382
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4546149
专题	山东大学
作者单位	1.School of Photoelectric Engineering, Changzhou Institute of Technology, Changzhou 2.Jiangsu 3.213002, C
推荐引用方式 GB/T 7714	Xu, Wei-Long,Zheng, Min,Ding, C.,et al. Saturated antisolvent pressure induced perylene diimide nanowires with high degree of electron delocalization[J]. Organic Electronics,2019,75.
APA	Xu, Wei-Long.,Zheng, Min.,Ding, C..,Qin, Tian.,Niu, Meng-Si.,...&Hao, Xiao-Tao.(2019).Saturated antisolvent pressure induced perylene diimide nanowires with high degree of electron delocalization.Organic Electronics,75.
MLA	Xu, Wei-Long,et al."Saturated antisolvent pressure induced perylene diimide nanowires with high degree of electron delocalization".Organic Electronics 75(2019).

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