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	Surface quality evaluation of single crystal 4H-SiC wafer machined by hybrid laser-waterjet: Comparing with laser machining
	Feng, Shaochuan; Huang, Chuanzhen; Wang, Jun; Jia, Zhixin
刊名	MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
	2019
卷号	93页码:238-251
关键词	Single crystal 4H-SiC Surface quality Hybrid laser-waterjet micromachining Heat-affected zone (HAZ) Recast layer Oxidation behavior
DOI	10.1016/j.mssp.2018.12.037
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4543899
专题	山东大学
作者单位	1.Univ Sci & Technol Beijing, Sch Mech Engn, Beijing 100083, Peoples R China. 2.Shandong Univ, Sch Me
推荐引用方式 GB/T 7714	Feng, Shaochuan,Huang, Chuanzhen,Wang, Jun,et al. Surface quality evaluation of single crystal 4H-SiC wafer machined by hybrid laser-waterjet: Comparing with laser machining[J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2019,93:238-251.
APA	Feng, Shaochuan,Huang, Chuanzhen,Wang, Jun,&Jia, Zhixin.(2019).Surface quality evaluation of single crystal 4H-SiC wafer machined by hybrid laser-waterjet: Comparing with laser machining.MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,93,238-251.
MLA	Feng, Shaochuan,et al."Surface quality evaluation of single crystal 4H-SiC wafer machined by hybrid laser-waterjet: Comparing with laser machining".MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 93(2019):238-251.

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