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	Schottky-barrier thin-film transistors based on HfO2-capped InSe
	Wang, Yiming; Zhang, Jiawei; Liang, Guangda; Shi, Yanpeng; Zhang, Yifei; Kudrynskyi, Zakhar R.; Kovalyuk, Zakhar D.; , Amalia; Xin, Qian; Song, Aimin
刊名	Applied Physics Letters
	2019
卷号	115期号:3
DOI	10.1063/1.5096965
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4532413
专题	山东大学
作者单位	Center of Nanoelectronics, State Key Laborato
推荐引用方式 GB/T 7714	Wang, Yiming,Zhang, Jiawei,Liang, Guangda,et al. Schottky-barrier thin-film transistors based on HfO2-capped InSe[J]. Applied Physics Letters,2019,115(3).
APA	Wang, Yiming.,Zhang, Jiawei.,Liang, Guangda.,Shi, Yanpeng.,Zhang, Yifei.,...&Song, Aimin.(2019).Schottky-barrier thin-film transistors based on HfO2-capped InSe.Applied Physics Letters,115(3).
MLA	Wang, Yiming,et al."Schottky-barrier thin-film transistors based on HfO2-capped InSe".Applied Physics Letters 115.3(2019).

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