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	Optoelectronic properties of Cu3N thin films deposited by reactive magnetron sputtering and its diode rectification characteristics
	Chen, Sheng-Chi; Huang, Sin-Yi; Sakalley, Shikha; Paliwal, Abhyuday; Chen, Yin-Hung; Liao, Ming-Han; Sun, Hui; Biring, Sajal
刊名	JOURNAL OF ALLOYS AND COMPOUNDS
	2019
卷号	789页码:428-434
关键词	Cu3N thin films Reactive magnetron sputtering Working pressure Electrical properties Optical properties Homojunction and heterojunction diodes Rectification characteristics
DOI	10.1016/j.jallcom.2019.02.268
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4530082
专题	山东大学
作者单位	1.Ming Chi Univ Technol, Dept Mat Engn, Taipei 243, Taiwan. 2.[Ch
推荐引用方式 GB/T 7714	Chen, Sheng-Chi,Huang, Sin-Yi,Sakalley, Shikha,et al. Optoelectronic properties of Cu3N thin films deposited by reactive magnetron sputtering and its diode rectification characteristics[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2019,789:428-434.
APA	Chen, Sheng-Chi.,Huang, Sin-Yi.,Sakalley, Shikha.,Paliwal, Abhyuday.,Chen, Yin-Hung.,...&Biring, Sajal.(2019).Optoelectronic properties of Cu3N thin films deposited by reactive magnetron sputtering and its diode rectification characteristics.JOURNAL OF ALLOYS AND COMPOUNDS,789,428-434.
MLA	Chen, Sheng-Chi,et al."Optoelectronic properties of Cu3N thin films deposited by reactive magnetron sputtering and its diode rectification characteristics".JOURNAL OF ALLOYS AND COMPOUNDS 789(2019):428-434.

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