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	A comparative study of intermediate layers for the growth of high crystalline GaN films on amorphous glass substrates with low-temperature ECR-PEMOCVD
	Bian JM(边继明); Qin FW(秦福文)
刊名	Materials Science in Semiconductor Processing
	2014
卷号	26页码:182-186
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4513625
专题	大连理工大学
推荐引用方式 GB/T 7714	Bian JM,Qin FW. A comparative study of intermediate layers for the growth of high crystalline GaN films on amorphous glass substrates with low-temperature ECR-PEMOCVD[J]. Materials Science in Semiconductor Processing,2014,26:182-186.
APA	Bian JM,&Qin FW.(2014).A comparative study of intermediate layers for the growth of high crystalline GaN films on amorphous glass substrates with low-temperature ECR-PEMOCVD.Materials Science in Semiconductor Processing,26,182-186.
MLA	Bian JM,et al."A comparative study of intermediate layers for the growth of high crystalline GaN films on amorphous glass substrates with low-temperature ECR-PEMOCVD".Materials Science in Semiconductor Processing 26(2014):182-186.

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