Polarity dependent structure and optical properties of freestanding GaN layers grown by hydride vapor phase epitaxy

	Polarity dependent structure and optical properties of freestanding GaN layers grown by hydride vapor phase epitaxy
	Hu, Qiang ; Wei, Tongbo ; Duan, Ruifei ; Yang, Jiankun ; Huo, Ziqiang ; Zeng, Yiping ; Xu, Shu
刊名	materials science in semiconductor processing
	2011
关键词	Carrier concentration Etching Gallium alloys Optical properties Point defects Raman spectroscopy Semiconducting gallium compounds Vapor phase epitaxy Vapors
ISSN号	13698001
通讯作者	hu, q.(huqiang@semi.ac.cn)
学科主题	半导体材料
收录类别	EI
语种	英语
公开日期	2012-06-14
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/23146]
专题	半导体研究所_中科院半导体照明研发中心
推荐引用方式 GB/T 7714	Hu, Qiang,Wei, Tongbo,Duan, Ruifei,et al. Polarity dependent structure and optical properties of freestanding GaN layers grown by hydride vapor phase epitaxy[J]. materials science in semiconductor processing,2011.
APA	Hu, Qiang.,Wei, Tongbo.,Duan, Ruifei.,Yang, Jiankun.,Huo, Ziqiang.,...&Xu, Shu.(2011).Polarity dependent structure and optical properties of freestanding GaN layers grown by hydride vapor phase epitaxy.materials science in semiconductor processing.
MLA	Hu, Qiang,et al."Polarity dependent structure and optical properties of freestanding GaN layers grown by hydride vapor phase epitaxy".materials science in semiconductor processing (2011).