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	Hexagonal phase-pure wide band gap epsilon-Ga2O3 films grown on 6H-SiC substrates by metal organic chemical vapor deposition
	Xia, Xiaochuan; Chen, Yuanpeng; Feng, Qiuju; Liang, Hongwei; Tao, Pengcheng; Xu, Mengxiang; Du, Guotong
刊名	APPLIED PHYSICS LETTERS
	2016
卷号	108
ISSN号	0003-6951
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4368108
专题	大连理工大学
作者单位	1.Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China. 2.Liaoning Normal Univ, Sch Phys & Elect Technol, Dalian 116029, Peoples R China.
推荐引用方式 GB/T 7714	Xia, Xiaochuan,Chen, Yuanpeng,Feng, Qiuju,et al. Hexagonal phase-pure wide band gap epsilon-Ga2O3 films grown on 6H-SiC substrates by metal organic chemical vapor deposition[J]. APPLIED PHYSICS LETTERS,2016,108.
APA	Xia, Xiaochuan.,Chen, Yuanpeng.,Feng, Qiuju.,Liang, Hongwei.,Tao, Pengcheng.,...&Du, Guotong.(2016).Hexagonal phase-pure wide band gap epsilon-Ga2O3 films grown on 6H-SiC substrates by metal organic chemical vapor deposition.APPLIED PHYSICS LETTERS,108.
MLA	Xia, Xiaochuan,et al."Hexagonal phase-pure wide band gap epsilon-Ga2O3 films grown on 6H-SiC substrates by metal organic chemical vapor deposition".APPLIED PHYSICS LETTERS 108(2016).

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