| Process parameters influence on the growth rate during silicon purification by vacuum directional solidification | |
| Qiu, Shi; Wen, Shutao; Fang, Ming; Zhang, Lei; Gan, Chuanhai; Jiang, Dachuan; Tan, Yi; Li, Jintang; Luo, Xuetao | |
| 刊名 | VACUUM
 |
| 2016 | |
| 卷号 | 125页码:40-47 |
| 关键词 | Silicon Directional solidification Process parameters Crystal growth rate |
| ISSN号 | 0042-207X |
| URL标识 | 查看原文 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/4367035 |
| 专题 | 大连理工大学 |
| 作者单位 | 1.Xiamen Univ, Coll Mat, Fujian Prov Key Lab Adv Mat, 422 Siming South Rd, Xiamen 361005, Fujian, Peoples R China. 2.Qingdao Longsun Silicon Technol Co Ltd, Qingdao 266200, Peoples R China. 3.Dalian Univ Technol, Sch Mat Sci & Engn, Dalian 116023, Peoples R China. 4.Qingdao Longsun Silicon Technol Co Ltd, Qingdao 266200, Peoples R China. 5.Xiamen Univ, Coll Mat, Fujian Prov Key Lab Adv Mat, 422 Siming South Rd, Xiamen 361005, Fujian, Peoples R China. 6.Dalian Univ Technol, Sch Mat Sci & Engn, Dalian 116023, Peoples R China. 7.Qingdao Longsun Silicon Technol Co Ltd, Qingdao 266200, Peoples R China. |
| 推荐引用方式 GB/T 7714 | Qiu, Shi,Wen, Shutao,Fang, Ming,et al. Process parameters influence on the growth rate during silicon purification by vacuum directional solidification[J]. VACUUM,2016,125:40-47. |
| APA | Qiu, Shi.,Wen, Shutao.,Fang, Ming.,Zhang, Lei.,Gan, Chuanhai.,...&Luo, Xuetao.(2016).Process parameters influence on the growth rate during silicon purification by vacuum directional solidification.VACUUM,125,40-47. |
| MLA | Qiu, Shi,et al."Process parameters influence on the growth rate during silicon purification by vacuum directional solidification".VACUUM 125(2016):40-47. |
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