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	Investigation on the electrical performances and stability of W-doped ZnO thin-film transistors
	Abliz, Ablat; Wan, Da; Yang, Linyu; Mamat, Mamatrishat; Chen, Henglei; Xu, Lei; Wang, Chunlan; Duan, Haiming
刊名	MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
	2019
卷号	95
关键词	Zinc oxide Thin film transistors Carrier concentration Stability Doping
ISSN号	1369-8001
DOI	10.1016/j.mssp.2019.01.027
URL标识	查看原文
收录类别	EI ; SCIE
语种	英语
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4234053
专题	武汉大学
推荐引用方式 GB/T 7714	Abliz, Ablat,Wan, Da,Yang, Linyu,et al. Investigation on the electrical performances and stability of W-doped ZnO thin-film transistors[J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2019,95.
APA	Abliz, Ablat.,Wan, Da.,Yang, Linyu.,Mamat, Mamatrishat.,Chen, Henglei.,...&Duan, Haiming.(2019).Investigation on the electrical performances and stability of W-doped ZnO thin-film transistors.MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,95.
MLA	Abliz, Ablat,et al."Investigation on the electrical performances and stability of W-doped ZnO thin-film transistors".MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 95(2019).

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