Surface transfer hole doping of epitaxial graphene using MoO3 thin film

	Surface transfer hole doping of epitaxial graphene using MoO3 thin film
	Chen ZY ; Santoso I ; Wang R ; Xie LF ; Mao HY ; Huang H ; Wang YZ ; Gao XY ; Chen ZK ; Ma DG ; Wee ATS ; Chen W
刊名	applied physics letters
	2010
卷号	96 期号:21 页码:文献编号：213104
关键词	ELECTRONIC-STRUCTURE OXIDES 6H-SIC(0001)
ISSN号	0003-6951
通讯作者	chen w
中文摘要	synchrotron-based in situ photoelectron spectroscopy investigations demonstrate effective surface transfer p-type doping of epitaxial graphene (eg) thermally grown on 4h-sic(0001) via the deposition of moo3 thin film on top. the large work function difference between eg and moo3 facilitates electron transfer from eg to the moo3 thin film. this leads to hole accumulation in the eg layer with an areal hole density of about 1.0x10(13) cm(-2), and places the fermi level 0.38 ev below the graphene dirac point. (c) 2010 american institute of physics. [doi: 10.1063/1.3441263]
收录类别	SCI收录期刊论文
语种	英语
WOS记录号	WOS:000278183200057
公开日期	2012-06-06
内容类型	期刊论文
源URL	[http://ir.ciac.jl.cn/handle/322003/43694]
专题	长春应用化学研究所_长春应用化学研究所知识产出_期刊论文
推荐引用方式 GB/T 7714	Chen ZY,Santoso I,Wang R,et al. Surface transfer hole doping of epitaxial graphene using MoO3 thin film[J]. applied physics letters,2010,96(21):文献编号：213104.
APA	Chen ZY.,Santoso I.,Wang R.,Xie LF.,Mao HY.,...&Chen W.(2010).Surface transfer hole doping of epitaxial graphene using MoO3 thin film.applied physics letters,96(21),文献编号：213104.
MLA	Chen ZY,et al."Surface transfer hole doping of epitaxial graphene using MoO3 thin film".applied physics letters 96.21(2010):文献编号：213104.