| Schottky barrier modulation of a GaTe/graphene heterostructure by interlayer distance and perpendicular electric field | |
| Li, Hengheng; Zhou, Zhongpo; Zhang, Kelei; Wang, Haiying | |
| 刊名 | NANOTECHNOLOGY
 |
| 2019 | |
| 卷号 | 30期号:40 |
| 关键词 | GaTe graphene Schottky barrier strain layer-distance electric field |
| ISSN号 | 0957-4484 |
| DOI | 10.1088/1361-6528/ab2d67 |
| URL标识 | 查看原文 |
| 收录类别 | EI ; SCIE |
| 语种 | 英语 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/4215679 |
| 专题 | 武汉大学 |
| 推荐引用方式 GB/T 7714 | Li, Hengheng,Zhou, Zhongpo,Zhang, Kelei,et al. Schottky barrier modulation of a GaTe/graphene heterostructure by interlayer distance and perpendicular electric field[J]. NANOTECHNOLOGY,2019,30(40). |
| APA | Li, Hengheng,Zhou, Zhongpo,Zhang, Kelei,&Wang, Haiying.(2019).Schottky barrier modulation of a GaTe/graphene heterostructure by interlayer distance and perpendicular electric field.NANOTECHNOLOGY,30(40). |
| MLA | Li, Hengheng,et al."Schottky barrier modulation of a GaTe/graphene heterostructure by interlayer distance and perpendicular electric field".NANOTECHNOLOGY 30.40(2019). |
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