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	Direct analysis of silicon carbide by fluorination assisted electrothermal vaporization inductively coupled plasma atomic emission spectrometry using a slurry sampling technique
	Peng, TY; Sheng, XH; Hu, B; Jiang, ZC
刊名	ANALYST
	2000
卷号	125期号:11
ISSN号	0003-2654
DOI	10.1039/b006441f
URL标识	查看原文
收录类别	SCIE
语种	英语
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4194465
专题	武汉大学
推荐引用方式 GB/T 7714	Peng, TY,Sheng, XH,Hu, B,et al. Direct analysis of silicon carbide by fluorination assisted electrothermal vaporization inductively coupled plasma atomic emission spectrometry using a slurry sampling technique[J]. ANALYST,2000,125(11).
APA	Peng, TY,Sheng, XH,Hu, B,&Jiang, ZC.(2000).Direct analysis of silicon carbide by fluorination assisted electrothermal vaporization inductively coupled plasma atomic emission spectrometry using a slurry sampling technique.ANALYST,125(11).
MLA	Peng, TY,et al."Direct analysis of silicon carbide by fluorination assisted electrothermal vaporization inductively coupled plasma atomic emission spectrometry using a slurry sampling technique".ANALYST 125.11(2000).

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