Crystal growth and differential thermal analysis of AgGaSe2

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	Crystal growth and differential thermal analysis of AgGaSe2
	S. F. Zhu ; J. Liu ; B. J. Zhao ; H. A. Jiang ; Z. H. Li
刊名	Crystal Research and Technology
	1995
卷号	30 期号:8 页码:1165-1168
关键词	infrared applications optical-quality
ISSN号	0232-1300
中文摘要	High quality AgGaSe2 single crystals with 20 mm in diameter and 55 mm in length have been grown by Bridgman technique. It is found that there is a second phase of Ag-rich Ga2Se3 (or named AgGa7Se11) in the AgGaSe2 crystal. It is concluded by discussions with the DTA results and the phase diagram that single crystals grown from polycrystalline materials with stoichiometric composition must contain a second phase of Ag-rich Ga2Se3. This result is helpful for the heat treatment, in which what and how much is added and what temperature is chosen for the heat treatment, are very important.
原文出处	://WOS:A1995TN13900017
公开日期	2012-04-14
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/38784]
专题	金属研究所_中国科学院金属研究所
推荐引用方式 GB/T 7714	S. F. Zhu,J. Liu,B. J. Zhao,et al. Crystal growth and differential thermal analysis of AgGaSe2[J]. Crystal Research and Technology,1995,30(8):1165-1168.
APA	S. F. Zhu,J. Liu,B. J. Zhao,H. A. Jiang,&Z. H. Li.(1995).Crystal growth and differential thermal analysis of AgGaSe2.Crystal Research and Technology,30(8),1165-1168.
MLA	S. F. Zhu,et al."Crystal growth and differential thermal analysis of AgGaSe2".Crystal Research and Technology 30.8(1995):1165-1168.