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	Preparation of p-type GaN-doped SnO2thin films by e-beam evaporation and their applications in p–n junction
	Lv, Shuliang; Zhou, Yawei; Xu, Wenwu; Mao, Wenfeng; Wang, Lingtao; Liu, Yong; He, Chunqing
刊名	Applied Surface Science
	2018
卷号	427
ISSN号	0169-4332
DOI	10.1016/j.apsusc.2017.07.297
URL标识	查看原文
收录类别	EI
语种	英语
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4155998
专题	武汉大学
推荐引用方式 GB/T 7714	Lv, Shuliang,Zhou, Yawei,Xu, Wenwu,et al. Preparation of p-type GaN-doped SnO2thin films by e-beam evaporation and their applications in p–n junction[J]. Applied Surface Science,2018,427.
APA	Lv, Shuliang.,Zhou, Yawei.,Xu, Wenwu.,Mao, Wenfeng.,Wang, Lingtao.,...&He, Chunqing.(2018).Preparation of p-type GaN-doped SnO2thin films by e-beam evaporation and their applications in p–n junction.Applied Surface Science,427.
MLA	Lv, Shuliang,et al."Preparation of p-type GaN-doped SnO2thin films by e-beam evaporation and their applications in p–n junction".Applied Surface Science 427(2018).

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