Behavioral Plasticity Emulated with Lithium Lanthanum Titanate-Based Memristive Devices: Habituation | |
Shi, Tuo; Wu, Jian-Fang; Liu, Yong; Yang, Rui; Guo, Xin | |
刊名 | ADVANCED ELECTRONIC MATERIALS |
2017 | |
卷号 | 3期号:9 |
关键词 | behavioral plasticity habituation lithium lanthanum titanate memristors resistive switching |
ISSN号 | 2199-160X |
DOI | 10.1002/aelm.201700046 |
URL标识 | 查看原文 |
收录类别 | SCIE ; SSCI |
语种 | 英语 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/4151466 |
专题 | 武汉大学 |
推荐引用方式 GB/T 7714 | Shi, Tuo,Wu, Jian-Fang,Liu, Yong,et al. Behavioral Plasticity Emulated with Lithium Lanthanum Titanate-Based Memristive Devices: Habituation[J]. ADVANCED ELECTRONIC MATERIALS,2017,3(9). |
APA | Shi, Tuo,Wu, Jian-Fang,Liu, Yong,Yang, Rui,&Guo, Xin.(2017).Behavioral Plasticity Emulated with Lithium Lanthanum Titanate-Based Memristive Devices: Habituation.ADVANCED ELECTRONIC MATERIALS,3(9). |
MLA | Shi, Tuo,et al."Behavioral Plasticity Emulated with Lithium Lanthanum Titanate-Based Memristive Devices: Habituation".ADVANCED ELECTRONIC MATERIALS 3.9(2017). |
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