| A comparative study on top-gated and bottom-gated multilayer MoS2 transistors with gate stacked dielectric of Al2O3/HfO2 | |
| Zou, Xiao; Xu, Jingping; Huang, Hao; Zhu, Ziqang; Wang, Hongjiu; Li, Borui; Liao, Lei; Fang, Guojia | |
| 刊名 | NANOTECHNOLOGY
 |
| 2018 | |
| 卷号 | 29期号:24 |
| 关键词 | multilayer MoS2 field-effect transistors stacked dielectrics encapsulation reliability |
| ISSN号 | 0957-4484 |
| DOI | 10.1088/1361-6528/aab9cb |
| URL标识 | 查看原文 |
| 收录类别 | SCIE |
| 语种 | 英语 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/4137389 |
| 专题 | 武汉大学 |
| 推荐引用方式 GB/T 7714 | Zou, Xiao,Xu, Jingping,Huang, Hao,et al. A comparative study on top-gated and bottom-gated multilayer MoS2 transistors with gate stacked dielectric of Al2O3/HfO2[J]. NANOTECHNOLOGY,2018,29(24). |
| APA | Zou, Xiao.,Xu, Jingping.,Huang, Hao.,Zhu, Ziqang.,Wang, Hongjiu.,...&Fang, Guojia.(2018).A comparative study on top-gated and bottom-gated multilayer MoS2 transistors with gate stacked dielectric of Al2O3/HfO2.NANOTECHNOLOGY,29(24). |
| MLA | Zou, Xiao,et al."A comparative study on top-gated and bottom-gated multilayer MoS2 transistors with gate stacked dielectric of Al2O3/HfO2".NANOTECHNOLOGY 29.24(2018). |
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