Structures and phase transition of GaAs under pressure

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	Structures and phase transition of GaAs under pressure
	C. Hong-Ling ; C. Xiang-Rong ; J. Guang-Fu ; W. Dong-Qing
刊名	Chinese Physics Letters
	2008
卷号	25 期号:6 页码:2169-2172
关键词	iii-v electronic-structure gallium-arsenide semiconductors stability alas iv si
ISSN号	0256-307X
中文摘要	A first-principles plane wave method with the ultrasoft pseudopotential scheme in the frame of the density functional theory (DFT) is performed to calculate the lattice parameters a and c, the bulk modulus B(0) and its pressure derivative B'(0) of the zinc-blende GaAs (ZB-GaAs), rocksalt GaAs (RS-GaAs), CsCl-GaAs, NiAs-GaAs and wurtzite GaAs (WZ-GaAs). Our results are consistent with the available experimental data and other theoretical results. We also calculate the phase transition pressures among these different phases. The results are satisfactory.
原文出处	://WOS:000256252600067
公开日期	2012-04-13
内容类型	期刊论文
源URL	[http://210.72.142.130/handle/321006/32805]
专题	金属研究所_中国科学院金属研究所
推荐引用方式 GB/T 7714	C. Hong-Ling,C. Xiang-Rong,J. Guang-Fu,et al. Structures and phase transition of GaAs under pressure[J]. Chinese Physics Letters,2008,25(6):2169-2172.
APA	C. Hong-Ling,C. Xiang-Rong,J. Guang-Fu,&W. Dong-Qing.(2008).Structures and phase transition of GaAs under pressure.Chinese Physics Letters,25(6),2169-2172.
MLA	C. Hong-Ling,et al."Structures and phase transition of GaAs under pressure".Chinese Physics Letters 25.6(2008):2169-2172.