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	Anomalous and Highly Efficient InAs Nanowire Phototransistors Based on Majority Carrier Transport at Room Temperature
	Guo, Nan; Hu, Weida; Liao, Lei; Yip, SenPo; Ho, Johnny C.; Miao, Jinshui; Zhang, Zhi; Zou, Jin; Jiang, Tao; Wu, Shiwei
刊名	ADVANCED MATERIALS
	2014
卷号	26期号:48
ISSN号	0935-9648
DOI	10.1002/adma.201403664
URL标识	查看原文
收录类别	SCIE ; EI
语种	英语
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4117018
专题	武汉大学
推荐引用方式 GB/T 7714	Guo, Nan,Hu, Weida,Liao, Lei,et al. Anomalous and Highly Efficient InAs Nanowire Phototransistors Based on Majority Carrier Transport at Room Temperature[J]. ADVANCED MATERIALS,2014,26(48).
APA	Guo, Nan.,Hu, Weida.,Liao, Lei.,Yip, SenPo.,Ho, Johnny C..,...&Lu, Wei.(2014).Anomalous and Highly Efficient InAs Nanowire Phototransistors Based on Majority Carrier Transport at Room Temperature.ADVANCED MATERIALS,26(48).
MLA	Guo, Nan,et al."Anomalous and Highly Efficient InAs Nanowire Phototransistors Based on Majority Carrier Transport at Room Temperature".ADVANCED MATERIALS 26.48(2014).

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