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A General Method for Large-Scale Fabrication of Semiconducting Oxides with High SERS Sensitivity
Zheng, Xudong; Ren, Feng; Zhang, Shunping; Zhang, Xiaolei; Wu, Hengyi; Zhang, Xingang; Xing, Zhuo; Qin, Wenjing; Liu, Yong; Jiang, Changzhong
刊名ACS APPLIED MATERIALS & INTERFACES
2017
卷号9期号:16
关键词ion irradiation semiconducting oxide oxygen vacancy charge transfer surface-enhanced Raman scattering
ISSN号1944-8244
DOI10.1021/acsami.7b03839
URL标识查看原文
收录类别SCIE ; EI
语种英语
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/4104250
专题武汉大学
推荐引用方式
GB/T 7714
Zheng, Xudong,Ren, Feng,Zhang, Shunping,et al. A General Method for Large-Scale Fabrication of Semiconducting Oxides with High SERS Sensitivity[J]. ACS APPLIED MATERIALS & INTERFACES,2017,9(16).
APA Zheng, Xudong.,Ren, Feng.,Zhang, Shunping.,Zhang, Xiaolei.,Wu, Hengyi.,...&Jiang, Changzhong.(2017).A General Method for Large-Scale Fabrication of Semiconducting Oxides with High SERS Sensitivity.ACS APPLIED MATERIALS & INTERFACES,9(16).
MLA Zheng, Xudong,et al."A General Method for Large-Scale Fabrication of Semiconducting Oxides with High SERS Sensitivity".ACS APPLIED MATERIALS & INTERFACES 9.16(2017).
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