Interfacial structure of V(2)AlC thin films deposited on (11(2)over-bar0)-sapphire

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	Interfacial structure of V(2)AlC thin films deposited on (11(2)over-bar0)-sapphire
	D. P. Sigumonrong ; J. Zhang ; Y. C. Zhou ; D. Music ; J. Emmerlich ; J. Mayer ; J. M. Schneider
刊名	Scripta Materialia
	2011
卷号	64 期号:4 页码:347-350
关键词	MAX-phase thin film TEM Epitaxial growth Ab initio calculation ti-al-c electronic-structure m(n+1)ax(n) phases ge gas
ISSN号	1359-6462
中文摘要	Local epitaxy between V(2)AlC and sapphire without intentionally or spontaneously formed seed layers was observed by transmission electron microscopy. Our ab initio calculations suggest that the most stable interfacial structure is characterized by the stacking sequence...C-V-Al-V//O-Al..., exhibiting the largest work of separation for the configurations studied and hence strong interfacial bonding. It is proposed that a small misfit accompanied by strong interfacial bonding enable the local epitaxial growth of V(2)AlC on (11 (2) over bar0)-sapphire. (C) 2010 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
原文出处	://WOS:000285951600011
公开日期	2012-04-13
内容类型	期刊论文
源URL	[http://210.72.142.130/handle/321006/30663]
专题	金属研究所_中国科学院金属研究所
推荐引用方式 GB/T 7714	D. P. Sigumonrong,J. Zhang,Y. C. Zhou,et al. Interfacial structure of V(2)AlC thin films deposited on (11(2)over-bar0)-sapphire[J]. Scripta Materialia,2011,64(4):347-350.
APA	D. P. Sigumonrong.,J. Zhang.,Y. C. Zhou.,D. Music.,J. Emmerlich.,...&J. M. Schneider.(2011).Interfacial structure of V(2)AlC thin films deposited on (11(2)over-bar0)-sapphire.Scripta Materialia,64(4),347-350.
MLA	D. P. Sigumonrong,et al."Interfacial structure of V(2)AlC thin films deposited on (11(2)over-bar0)-sapphire".Scripta Materialia 64.4(2011):347-350.