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	Thermal transport across graphene/SiC interface: effects of atomic bond and crystallinity of substrate
	Li, Man; Zhang, Jingchao; Hu, Xuejiao; Yue, Yanan
刊名	APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
	2015
卷号	119期号:2
ISSN号	0947-8396
DOI	10.1007/s00339-015-9066-7
URL标识	查看原文
收录类别	SCIE ; EI
语种	英语
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4084167
专题	武汉大学
推荐引用方式 GB/T 7714	Li, Man,Zhang, Jingchao,Hu, Xuejiao,et al. Thermal transport across graphene/SiC interface: effects of atomic bond and crystallinity of substrate[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,2015,119(2).
APA	Li, Man,Zhang, Jingchao,Hu, Xuejiao,&Yue, Yanan.(2015).Thermal transport across graphene/SiC interface: effects of atomic bond and crystallinity of substrate.APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,119(2).
MLA	Li, Man,et al."Thermal transport across graphene/SiC interface: effects of atomic bond and crystallinity of substrate".APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 119.2(2015).

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