Investigation of Sb-rich Si2Sb2+x Te-6 material for phase change random access memory application

	Investigation of Sb-rich Si2Sb2+x Te-6 material for phase change random access memory application
	Zhou,XL ; Wu,LC ; Song,ZT ; Rao,F ; Liu,B ; Yao,DN ; Yin,WJ ; Feng,SL ; Chen,BM
刊名	APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
	2011
卷号	103 期号:4 页码:1077-1081
关键词	SPRINGER
ISSN号	0947-8396
学科主题	Materials Science ; Multidisciplinary; Physics ; Applied
公开日期	2012-04-10
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/106784]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Zhou,XL,Wu,LC,Song,ZT,et al. Investigation of Sb-rich Si2Sb2+x Te-6 material for phase change random access memory application[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,2011,103(4):1077-1081.
APA	Zhou,XL.,Wu,LC.,Song,ZT.,Rao,F.,Liu,B.,...&Chen,BM.(2011).Investigation of Sb-rich Si2Sb2+x Te-6 material for phase change random access memory application.APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,103(4),1077-1081.
MLA	Zhou,XL,et al."Investigation of Sb-rich Si2Sb2+x Te-6 material for phase change random access memory application".APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 103.4(2011):1077-1081.