Effect of Mg Doping on the Photoluminescence of GaN:Mg Films by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy

	Effect of Mg Doping on the Photoluminescence of GaN:Mg Films by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy
	Sui, YP ; Yu, GH
刊名	CHINESE PHYSICS LETTERS
	2011
卷号	28 期号:6 页码:67807
关键词	IOP PUBLISHING LTD
ISSN号	0256-307X
学科主题	Physics, Multidisciplinary
语种	英语
公开日期	2012-04-10
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/106783]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Sui, YP,Yu, GH. Effect of Mg Doping on the Photoluminescence of GaN:Mg Films by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy[J]. CHINESE PHYSICS LETTERS,2011,28(6):67807.
APA	Sui, YP,&Yu, GH.(2011).Effect of Mg Doping on the Photoluminescence of GaN:Mg Films by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy.CHINESE PHYSICS LETTERS,28(6),67807.
MLA	Sui, YP,et al."Effect of Mg Doping on the Photoluminescence of GaN:Mg Films by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy".CHINESE PHYSICS LETTERS 28.6(2011):67807.