Fabrication of Direct Silicon Bonded Hybrid Orientation Substrate by Separation by Implanted Oxygen Layer Transfer and Oxide Dissolution Annealing

	Fabrication of Direct Silicon Bonded Hybrid Orientation Substrate by Separation by Implanted Oxygen Layer Transfer and Oxide Dissolution Annealing
	Wei,X ; Xue,ZY ; Wu,AM ; Cao,GB ; Zhang,B ; Lin,CL ; Zhang,MA ; Wang,X
刊名	APPLIED PHYSICS EXPRESS
	2011
卷号	4 期号:3 页码:31301
关键词	JAPAN SOC APPLIED PHYSICS
ISSN号	1882-0778
学科主题	Physics ; Applied
公开日期	2012-04-10
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/106763]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Wei,X,Xue,ZY,Wu,AM,et al. Fabrication of Direct Silicon Bonded Hybrid Orientation Substrate by Separation by Implanted Oxygen Layer Transfer and Oxide Dissolution Annealing[J]. APPLIED PHYSICS EXPRESS,2011,4(3):31301.
APA	Wei,X.,Xue,ZY.,Wu,AM.,Cao,GB.,Zhang,B.,...&Wang,X.(2011).Fabrication of Direct Silicon Bonded Hybrid Orientation Substrate by Separation by Implanted Oxygen Layer Transfer and Oxide Dissolution Annealing.APPLIED PHYSICS EXPRESS,4(3),31301.
MLA	Wei,X,et al."Fabrication of Direct Silicon Bonded Hybrid Orientation Substrate by Separation by Implanted Oxygen Layer Transfer and Oxide Dissolution Annealing".APPLIED PHYSICS EXPRESS 4.3(2011):31301.