Phase Change Line Memory Cell Based on Ge2Sb2Te5 Fabricated Using Focused Ion Beam

	Phase Change Line Memory Cell Based on Ge2Sb2Te5 Fabricated Using Focused Ion Beam
	Du,XF ; Zhang,T ; Song,ZT ; Liu,WL ; Liu,XY ; Gu,YF ; Lv,SL ; Xue,WJ ; Xi,W
刊名	JAPANESE JOURNAL OF APPLIED PHYSICS
	2011
卷号	50 期号:7 页码:70211
关键词	JAPAN SOC APPLIED PHYSICS
ISSN号	0021-4922
学科主题	Physics ; Applied
公开日期	2012-04-10
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/106757]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Du,XF,Zhang,T,Song,ZT,et al. Phase Change Line Memory Cell Based on Ge2Sb2Te5 Fabricated Using Focused Ion Beam[J]. JAPANESE JOURNAL OF APPLIED PHYSICS,2011,50(7):70211.
APA	Du,XF.,Zhang,T.,Song,ZT.,Liu,WL.,Liu,XY.,...&Xi,W.(2011).Phase Change Line Memory Cell Based on Ge2Sb2Te5 Fabricated Using Focused Ion Beam.JAPANESE JOURNAL OF APPLIED PHYSICS,50(7),70211.
MLA	Du,XF,et al."Phase Change Line Memory Cell Based on Ge2Sb2Te5 Fabricated Using Focused Ion Beam".JAPANESE JOURNAL OF APPLIED PHYSICS 50.7(2011):70211.