Bias dependence of a deep submicron NMOSFET response to total dose irradiation

	Bias dependence of a deep submicron NMOSFET response to total dose irradiation
	Liu,ZL ; Hu,ZY ; Zhang,ZX ; Shao,H ; Chen,M ; Bi,DW ; Ning,BX ; Zou,SC
刊名	CHINESE PHYSICS B
	2011
卷号	20 期号:7 页码:70701
关键词	IOP PUBLISHING LTD
ISSN号	1674-1056
学科主题	Physics ; Multidisciplinary
公开日期	2012-04-10
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/106756]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Liu,ZL,Hu,ZY,Zhang,ZX,et al. Bias dependence of a deep submicron NMOSFET response to total dose irradiation[J]. CHINESE PHYSICS B,2011,20(7):70701.
APA	Liu,ZL.,Hu,ZY.,Zhang,ZX.,Shao,H.,Chen,M.,...&Zou,SC.(2011).Bias dependence of a deep submicron NMOSFET response to total dose irradiation.CHINESE PHYSICS B,20(7),70701.
MLA	Liu,ZL,et al."Bias dependence of a deep submicron NMOSFET response to total dose irradiation".CHINESE PHYSICS B 20.7(2011):70701.