H distribution and strain evolution in SiGe/Si heterostructure implanted by H dimers
An, ZH ; Men, CL ; Liu, WL ; Zhang, M ; Wu, YJ ; Xie, XY ; Chu, PK ; Lin, CL
刊名INTERNATIONAL JOURNAL OF MODERN PHYSICS B
2002
卷号16期号:28-29页码:4199-4202
关键词HYDROGEN IMPLANTATION LAYER TRANSFER SI SILICON FIELD
ISSN号0217-9792
通讯作者An, ZH, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, 865 Changning Rd, Shanghai 200050, Peoples R China
学科主题Physics, Applied; Physics, Condensed Matter; Physics, Mathematical
收录类别SCI
语种英语
公开日期2012-03-24
内容类型期刊论文
源URL[http://ir.sim.ac.cn/handle/331004/95631]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式
GB/T 7714
An, ZH,Men, CL,Liu, WL,et al. H distribution and strain evolution in SiGe/Si heterostructure implanted by H dimers[J]. INTERNATIONAL JOURNAL OF MODERN PHYSICS B,2002,16(28-29):4199-4202.
APA An, ZH.,Men, CL.,Liu, WL.,Zhang, M.,Wu, YJ.,...&Lin, CL.(2002).H distribution and strain evolution in SiGe/Si heterostructure implanted by H dimers.INTERNATIONAL JOURNAL OF MODERN PHYSICS B,16(28-29),4199-4202.
MLA An, ZH,et al."H distribution and strain evolution in SiGe/Si heterostructure implanted by H dimers".INTERNATIONAL JOURNAL OF MODERN PHYSICS B 16.28-29(2002):4199-4202.
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