Computer simulation for the formation of the insulator layer of silicon-on-insulator devices by N+ and O+ co-implantation

	Computer simulation for the formation of the insulator layer of silicon-on-insulator devices by N+ and O+ co-implantation
	Lin, Q ; Zhu, M ; Liu, XH ; Xie, XY ; Lin, CL
刊名	CHINESE PHYSICS LETTERS
	2002
卷号	19 期号:12 页码:1782-1784
关键词	OXYGEN
ISSN号	0256-307X
通讯作者	Lin, Q, Chinese Acad Sci, State Key Lab Funct Mat Informat, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China
学科主题	Physics, Multidisciplinary
收录类别	SCI
语种	英语
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/95630]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Lin, Q,Zhu, M,Liu, XH,et al. Computer simulation for the formation of the insulator layer of silicon-on-insulator devices by N+ and O+ co-implantation[J]. CHINESE PHYSICS LETTERS,2002,19(12):1782-1784.
APA	Lin, Q,Zhu, M,Liu, XH,Xie, XY,&Lin, CL.(2002).Computer simulation for the formation of the insulator layer of silicon-on-insulator devices by N+ and O+ co-implantation.CHINESE PHYSICS LETTERS,19(12),1782-1784.
MLA	Lin, Q,et al."Computer simulation for the formation of the insulator layer of silicon-on-insulator devices by N+ and O+ co-implantation".CHINESE PHYSICS LETTERS 19.12(2002):1782-1784.