Low defect density and planar patterned SOI materials by masked SIMOX

	Low defect density and planar patterned SOI materials by masked SIMOX
	Dong, YM ; Wang, X ; Wang, X ; Chen, M ; Chen, J
刊名	CHEMICAL PHYSICS LETTERS
	2003
卷号	378 期号:5-6 页码:470-473
关键词	LOW-DOSE SEPARATION IMPLANTATION ENERGY WAFERS
ISSN号	0009-2614
通讯作者	Dong, YM, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Ion Beam Lab, 865 Changning Rd, Shanghai 200050, Peoples R China
学科主题	Chemistry, Physical; Physics, Atomic, Molecular & Chemical
收录类别	SCI
语种	英语
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/95564]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Dong, YM,Wang, X,Wang, X,et al. Low defect density and planar patterned SOI materials by masked SIMOX[J]. CHEMICAL PHYSICS LETTERS,2003,378(5-6):470-473.
APA	Dong, YM,Wang, X,Wang, X,Chen, M,&Chen, J.(2003).Low defect density and planar patterned SOI materials by masked SIMOX.CHEMICAL PHYSICS LETTERS,378(5-6),470-473.
MLA	Dong, YM,et al."Low defect density and planar patterned SOI materials by masked SIMOX".CHEMICAL PHYSICS LETTERS 378.5-6(2003):470-473.