Memory and negative photoconductivity effects of Ge nanocrystals embedded in ZrO2/Al2O3 gate dielectrics

	Memory and negative photoconductivity effects of Ge nanocrystals embedded in ZrO2/Al2O3 gate dielectrics
	Wan, Q ; Zhang, NL ; Liu, WL ; Lin, CL ; Wang, TH
刊名	APPLIED PHYSICS LETTERS
	2003
卷号	83 期号:1 页码:138-140
关键词	SI NANOCRYSTALS SEMICONDUCTOR STRUCTURE ROOM-TEMPERATURE SILICON FILMS SIO2-FILMS STABILITY GROWTH MATRIX
ISSN号	0003-6951
通讯作者	Wang, TH, Chinese Acad Sci, Inst Phys, POB 603, Beijing 100080, Peoples R China
学科主题	Physics, Applied
收录类别	SCI
语种	英语
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/95544]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Wan, Q,Zhang, NL,Liu, WL,et al. Memory and negative photoconductivity effects of Ge nanocrystals embedded in ZrO2/Al2O3 gate dielectrics[J]. APPLIED PHYSICS LETTERS,2003,83(1):138-140.
APA	Wan, Q,Zhang, NL,Liu, WL,Lin, CL,&Wang, TH.(2003).Memory and negative photoconductivity effects of Ge nanocrystals embedded in ZrO2/Al2O3 gate dielectrics.APPLIED PHYSICS LETTERS,83(1),138-140.
MLA	Wan, Q,et al."Memory and negative photoconductivity effects of Ge nanocrystals embedded in ZrO2/Al2O3 gate dielectrics".APPLIED PHYSICS LETTERS 83.1(2003):138-140.