Structural and electrical characteristics of Ge nanoclusters embedded in Al2O3 gate dielectric

	Structural and electrical characteristics of Ge nanoclusters embedded in Al2O3 gate dielectric
	Wan, Q ; Lin, CL ; Liu, WL ; Wang, TH
刊名	APPLIED PHYSICS LETTERS
	2003
卷号	82 期号:26 页码:4708-4710
关键词	SI NANOCRYSTALS SILICON-NITRIDE LAYERS PHOTOLUMINESCENCE DEPOSITION OXIDATION EMISSION
ISSN号	0003-6951
通讯作者	Wan, Q, Chinese Acad Sci, Inst Phys, POB 603, Beijing 100080, Peoples R China
学科主题	Physics, Applied
收录类别	SCI
语种	英语
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/95477]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Wan, Q,Lin, CL,Liu, WL,et al. Structural and electrical characteristics of Ge nanoclusters embedded in Al2O3 gate dielectric[J]. APPLIED PHYSICS LETTERS,2003,82(26):4708-4710.
APA	Wan, Q,Lin, CL,Liu, WL,&Wang, TH.(2003).Structural and electrical characteristics of Ge nanoclusters embedded in Al2O3 gate dielectric.APPLIED PHYSICS LETTERS,82(26),4708-4710.
MLA	Wan, Q,et al."Structural and electrical characteristics of Ge nanoclusters embedded in Al2O3 gate dielectric".APPLIED PHYSICS LETTERS 82.26(2003):4708-4710.